new intelligent power modules (r series) 27 atsushi yamaguchi hiroaki ichikawa new intelligent power modules (r series) 1. introduction the equipment of power electronics application is comprised of general use inverters, numeric control (nc) machine tools, and industrial robots. recently, the requirements of lower noise, higher efficiency, advanced functions, lower price, and downsizing for these items have been growing. the power devices used as the equipment of power electronics applications are progressing toward lower loss and higher frequency, and the igbt (insulated gate bipolar transistor) rather than the bipolar transis- tor is gaining popularity. on the other hand, together with lowered loss for the igbt, intelligence is achieved by locating the peripheral circuits such as the driving circuit and various protective circuits inside the module. it then becomes possible to shorten the design time at the power circuit and contributes to downsizing and ad- vanced equipment function. in keeping step with the trends of making the power devices intelligent, fuji electric announced the bipolar transistor type of intelligent power modules type features series 6mbp15jb060 6mbp20jb060 6mbp100ja060 6mpb150ja060 6mbp200ja060 6mbp100ja120 7mbp50jb060 7mbp75jb060 7mbp50ja120 6mbp50na060 6mpb75na060 6MPB100NA060 j-ipm n-ipm 7mbp50na060 7mbp75na060 7mbp100na060 600 600 600 600 600 1,200 600 600 1,200 600 600 600 600 600 600 15 20 100 150 200 100 50 75 50 50 75 100 50 75 100 40 50 240 450 600 600 150 195 240 198 320 400 198 320 400 600 600 1,200 600 600 600 30 30 15 30 50 50 80 80 80 low loss high speed switching 120 198 198 v ces (v) i c (a) p c (w) v ces (v) i c (a) inverter dynamic brake p c (w) low loss soft switching high reliability (bjt-ipm) in 1989. in 1992, the j series of igbt-ipm (j-ipm) that pursued lower loss was developed and in 1995 the n series of igbt-ipm (n-ipm) aimed at lower price and lower noise was developed and pro- duced. this time, the r series of igbt-ipm (r-ipm) pursues higher cost performance, higher reliability and advanced functions. the line-up and features of fuji electric? igbt- ipms and the r-ipm are introduced in the following. 2. fuji electric? conventional igbt-ipm line-up and problems the line-up, performances and features of both the j-ipm and n-ipm are shown in table 1 . the j-ipm was developed with particular attention to low loss. the n-ipm realized low noise (soft switching) and low loss in order to respond to the market needs of emc (electro magnetic compatibility) regulations and to match the ce mark. furthermore, the n-ipm is an ipm with a lower price and higher reliability made possible by the adoption of new construction and new materials. the integrated functions are shown in table 1 the j-ipm and the n-ipm free datasheet http://
vol. 44 no. 1 fuji electric review 28 fig.2 package outline drawing of the r-series ipm table 2 protective functions of the ipm zyx u v w m i c i c i c (a) current path at motor lock (b) wave form at motor lock phase current pn-current phase current (20a/div) pn-current (25a/div) conditions : 200v ac, f c = 11.8khz fig.1 current path and waveform at motor lock description overcurrent protection short circuit protection drive power supply under-voltage protection overheat protection monitor collector current of every igbt, and protect against overcurrent by cutting off the current protects against short circuit current by cutting off the current by the same means as overcurrent protection detects drive power supply voltage, and protect in order to avoid destruction caused by under-voltage in case of lowering of voltage stores precise thermistor as temperature sensor and protects against abnormal temperature rise by rejection of output function table 2 . the functions of the j-ipm and n-ipm are identical, and the protection functions against short circuit, overcurrent, drive power supply under-voltage and overheating are integrated. however, since both the j-ipm and the n-ipm are constructed of many types of electronics parts, there are of course some limits to downsizing and low price. to protect against overheating the temperature of the insulation substrate mounted with the igbt chips was detected by thermistors. but it became problematic in applications where the current was concentrated into a few chips like motor lock mode, as shown in fig. 1 . 74 88 8 22 9 27 95 112 p n p b n p b n 109 95 4 - 5.5 138 121 4 - 5.5 w w v v u u 14 710 16 14 71016 (a) p610, p611 (b) p612 when the current was concentrated to the chip which was located on the far side from the sensor on the substrate, the sensor could not follow the rapid temperature risings and could not protect it. in order to solve these problems and to realize higher perfor- mance as well as higher cost performance, the r-ipm was developed. 3. the r-ipm the line-up, characteristics and integrated func- tions are shown in table 3 . the r-ipm has been applied the 3rd generation igbt chip, which v ce (sat) is 2.3v typically, thereby achieving lower loss. further- more, they are comprised of the t j detecting overheat protection function in addition to the former ipm? functions. outlines, external view and internal equiv- alent circuit are shown in figs. 2 , 3 and 4 respectively. because it is composed of a wide range including the ratings of 600v/50 to 300a and 1,200v/25 to 150a free datasheet http://
new intelligent power modules (r series) 29 as well as 6-pack and 7-pack (including a dynamic brake circuit), this series is able to respond to the various market needs. 4. features of the r-ipm the features of the r-ipm can be summarized as follows: (1 ) low loss and soft switching by using the third generation igbt chips (2 )r ealization of high reliability, pursing higher performance of the igbt by means of the protec- tion by directly detecting the igbt chips tempara- ture (3) realization of high reliability and high cost perfor- mance by means of integrating all control circuits into the ic chips (4 )a wide line-up together with the adoption of a compatible package (p610, p611) with fuji? con- ventional ipm (5 ) accomplishment of good noise immunity against malfunction due to switching noise the key technical points concerning the develop- table 3 line-up and integrated functions of the r-ipm (a) 600v series (b) 1,200v series type package 6mbp50ra060 6mbp75ra060 6mbp100ra060 6mpb150ra060 7mbp50ra060 7mbp75ra060 7mbp100ra060 7mbp150ra060 6mbp200ra060 * 6mbp300ra060 * 450 450 450 450 450 450 450 450 450 450 2.3 2.3 2.3 2.3 2.3 2.3 2.3 2.3 2.3 2.3 30 50 50 50 p610 p610 p611 p611 p610 p610 p611 p611 p612 p612 v dc (v) 600 600 600 600 600 600 600 600 600 600 v ces (v) 50 75 100 150 50 75 100 150 200 300 i c (a) 198 320 400 600 198 320 400 600 735 1,040 p c (w) 600 600 600 600 v ces (v) 30 50 50 50 i c (a) 120 198 198 198 p c (w) v ce(sat) typical (v) diode i f (a) dr uvt oct sct t c -oht 7mbp300ra060 * 7mbp200ra060 * 450 450 2.3 2.3 100 75 p612 p612 600 600 300 200 1,040 735 600 600 100 75 400 320 t j -oht inverter dynamic brake integrated functions type package 6mbp25ra120 * 6mbp50ra120 * 6mbp75ra120 * 7mpb25ra120 * 7mbp50ra120 * 7mbp75ra120 * 6mbp100ra120 * 6mbp150ra120 * * : under development dr: drive circuit. uvt: control power supply under voltage protection, oct: overcurrent protection, sct: short circuit prot ection t c -oht: case overheat protection, t j -oht: device overheat protection 900 900 900 900 900 900 900 900 p610 p611 p611 p610 p611 p611 p612 p612 v dc (v) 1,200 1,200 1,200 1,200 1,200 1,200 1,200 1,200 v ces (v) 25 50 75 25 50 75 100 150 i c (a) 198 400 595 198 400 595 735 1,040 2.3 2.3 2.3 2.3 2.3 2.3 2.3 2.3 p c (w) 1,200 1,200 1,200 v ces (v) i c (a) 120 198 198 15 25 25 15 25 25 p c (w) v ce(sat) typical (v) diode i f (a) dr uvt oct sct t c -oht 7mbp100ra120 * 7mbp150ra120 * 900 900 50 50 p612 p612 1,200 1,200 100 150 735 1,040 2.3 2.3 1,200 1,200 50 50 400 400 t j -oht inverter dynamic brake integrated functions fig.3 external view of the r-ipm free datasheet http://
vol. 44 no. 1 fuji electric review 30 fig.4 internal equivalent circuit of the r-ipm (a 7 set example) fig.6 overheating protection device ment are introduced below. 4.1 improvement in performance of overheat protection function in addition to the conventional case overheat protection, the device overheat protection function is integrated in the r-ipm. the conventional case overheat protection function is indispensable. it was certainly effective against relatively slow temperature risings when overload occurred or a fan broke down. however, since protection is insufficient against the phenomenon of rapid temperature rise of the igbt chips, like the motor lock mode mentioned in section 2, the t j detecting overheat protection function is applied in the r-ipm. in an experiment simulation a motor lock mode, the junction temperature of the igbt chip which located on the farthest position from the sensor and temperature of the sensor were measured when the igbt chip was applied power loss and heated using a conventional ipm. the results are shown in fig. 5 . since the temperature of the igbt chip exceeded 150 c before the temperature sensor reached the fig.5 temperature rise of the igbt chip and the temperature sensor vccu vinu p gndu vccv vinv gndv vccw vinw gndw vcc vinx gnd viny vinz vindb alm ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? u v w b n v z v z v z v z v z v z v z r alm drive circuit drive circuit drive circuit drive circuit drive circuit drive circuit drive circuit function in drive circuit overheat protection circuit drive circuit for igbt short circuit protection under voltage protection overcurrent protection device for overheating protection 200 175 150 125 100 75 50 25 0 0 24 6810 12 14 16 igbt chip temperture sensor protection zone for case overheating time min temperature ? ic igbt constant-current source temperature detection device for temperature detection temperature for case protection, there is the possibility that the igbt chips may be destroyed if this operating condition continues. it is clear that the device overheat protection function is indispensable. the device overheat protection function differs from the case overheat protection of conventional ipms. it protects against thermal destruction of the igbt chips by directly detecting the junction tempera- ture of the igbt chips in which the temperature sensor is embedded. in order to achieve this function, the temperature detection device is made on the igbt chip as shown in fig. 6 . detection of the igbt chips temperature is performed utilizing the dependance of this device on temperature. this device is embedded by using poly-silicon on insulator technology to prevent the influence of the free datasheet http://
new intelligent power modules (r series) 31 fig.8 switching waveforms of the r-ipm and the j-ipm fig.7 timing chart of protection function fig.9 ratio of electronic parts (ic inclusive) alm on rt rt v lvt + v h v lvt v lvt v cc v in 2ms 2ms 2ms 2ms 1ms 1ms 0 on 0 6 o e f s w p m u b h f q s p u f d u j p o p g d p o u s p m t v q q m z t p v s d f 0 w f s d v s s f o u q s p u f d u j p o 4 i p s u d j s d v j u q s p u f d u j p o 0 w f s i f b u q s p u f d u j p o p g d b t f 0 w f s i f b u q s p u f d u j p o p g e f w j d f i c i oc i sc t c oh t j oh t j oh ? t j h t c oh ? t c h t c t j 0 20 40 60 80 100 j-ipm n-ipm r-ipm 100 ? 40 ? 10 ? ratio to j-ipm ? switching noise of the igbt chips. a dead time of 1ms is provided when detecting the ic side so that false detection by noise is prevented. the timing chart of the protection functions are shown in fig. 7 . overheat protection goes into effect and softly shut down the current when a certain condition continues for 1ms. this condition entails that overheat protection of both the case and the device reach the detection level. at the same time, the alarm? output and the protection state are engaged. the alarm output and protection state are reset when v ce , v f : 100v/div, i c , i f : 25a/div, t : 100ns/div condition : e dc = 300v, v cc = 15v, t j =25 c r-ipm (50a) turn-on j-ipm (50a) turn-on turn-off turn-off recovery recovery free datasheet http://
vol. 44 no. 1 fuji electric review 32 the input signal is off state and the temperature reaches reset level. 4.2 integration of the control circuit to the ic the control circuit of ipms were designed and evaluated, combining with igbt chips after ics were designed. therefore, it had to adjust a drive ability of an igbt and various protection functions and accom- plish good noise immunity by using additional parts other than ics. it is impossible to achieve a single chip ic which is not adjustable and has adopted a hybrid construction combined with various electronics parts. consequently, the further downsizing or lowering of costs is deviously limited. however, the r-ipm solves these problems through experiments cultivated by the development of the conventional ipm and the technolo- gies to be described below. integration of the ipm control circuit with the ic involves an adjusting method with the igbt and measures against noise. with the following techno- loties, the integration of the control circuit to the ic is successful. (1) through simulation technology conducted by a combination of igbt characteristics and ic char- acteristics, the most suitable design is determined by theoretical study and review of such factors as the necessary capabilities required for the ic. (2) the noise immunity is improved by insertion of a filter on the reference power supply of each circuit block, and by incorporating a filter into the ic, formerly provided externally, which results in less noise on the circuit pattern. (3) malfunction are prevented by reducing noise in- flow. this is achieved by separating the noise sensitive igbt ground from the sensing and protection circuit grounds. (4) the noise immunity increased remarkably by the reduction of wiring volume of the control circuit compared with the conventional ipm through the integration of the control circuit within the ic. (5) low loss and soft switching are realized through the prevention of influence from outside noise by locating the igbt and the ic as close as possible and through the optimization of the ic so that it can efficiently drive the igbt. the switching waveforms of the j-ipm and the r- ipm are shown in fig 8 . in particular, the r-ipm restricts di / dt , dv / dt at the time of turn-on and recovery, and realizes soft switching. through the measures mentioned above, the num- ber of electronics parts have been reduced to 1/10 that of the j-ipm, as shown in fig. 9 . 4.3 package construction facilitated use is taken into consideration for the newly designed package, maintaining compatibility. the features are as follows. (1) preservation of compatibility of the mounting, main terminal and control terminal position (p610, p611 package) (2) preservation of endurance against bending frac- ture through the adoption of metallic guide pins for the control terminals (3) dissolution of a terminal deformation through the shortening of control terminals (4) realization of a thin shape and light weight through optimization of the internal construction 5. conclusion fuji electric? ipms and the series and features of the recently developed the r-ipm have been intro- duced. the r-ipm is the first product to comprise the ipm utilizing only silicon semiconductors. in addition, the function which directly detects the temperature of the igbt chips has been newly built-in. we firmly believe that application of the r-ipm contributes to the downsizing and high reliability of the equipment by a considerable degree. furthermore, making the power devices intelligent will be promoted more often in the future, together with the progress of ic technology, corresponding to the needs for reduced total system costs, downsizing and high reliability of application products. we resolve to strive for the development and production of such products so that we are able to fully respond to the market? needs. free datasheet http://
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